https://devzone.nordicsemi.com/f/nordic-q-a/20502/what-are-the-characteristics-of-the-nrf52832-gpio-internal-esd-structuresWhat are the following characteristics for the &#39;ESD structures&#39;/diodes pictured? Reverse breakdown voltage, rated forward current, forward voltageen-USTelligent Community 13Thu, 16 Mar 2017 11:50:33 GMThttps://devzone.nordicsemi.com/thread/79929?ContentTypeID=1Thu, 16 Mar 2017 11:50:33 GMT137ad170-7792-4731-bb38-c0d22fbe4515:b5e7a791-6ffd-4212-a1d8-b32d573dd799run_ar<p>The forward voltage of the diode structure is not explicitly specified, but by looking at the maximum ratings, you can deduct that the ESD structure has a drop of 0.3V (GND-0.3V, VDD_NRF+0.3V).</p> <p>I cannot state breakdown voltage, nor the rated forward current, but what we specify is that the chip is guaranteed to withstand ESD HBM and CDM up to the specified maximum in our specification:</p> <p><a href="http://infocenter.nordicsemi.com/topic/com.nordic.infocenter.nrf52832.ps.v1.1/abs_max_ratings.html?cp=2_2_0_4#abs_max_ratings">infocenter.nordicsemi.com/.../abs_max_ratings.html</a></p> <p>Note that HBM and CDM differs depending on the type of mechanical package you&#39;re using.</p><div style="clear:both;"></div>