nRF52832 FLASH write issue

RE: nRF52832 FLASH write issue

zzzZ — Tue, 05 Jan 2021 01:07:10 GMT

Thanks！resolved

RE: nRF52832 FLASH write issue

Henry_Chou — Thu, 31 Dec 2020 09:16:23 GMT

You may refer the example flash_fstorage. Your problems can be solved.

RE: nRF52832 FLASH write issue

zzzZ — Thu, 31 Dec 2020 09:05:10 GMT

Among the APIs used, wait ready function is used

uint32_t sd_flash_write(uint32_t * const p_dst, uint32_t const * const p_src, uint32_t size)
{
    if (size > FLASH_WRITE_MAX_LENGTH)
    {
        return NRF_ERROR_INVALID_LENGTH;
    }

    if (!addr_is_in_FLASH(p_dst))
    {
        return NRF_ERROR_INVALID_ADDR;
    }

    nrf_nvmc_write_words((uint32_t) p_dst, p_src, size);
    m_flash_op_handler(true);
    return NRF_SUCCESS;
}

void nrf_nvmc_write_words(uint32_t address, const uint32_t * src, uint32_t num_words)
{
    uint32_t i;

    // Enable write.
    NRF_NVMC->CONFIG = NVMC_CONFIG_WEN_Wen;
    __ISB();
    __DSB();

    for (i = 0; i < num_words; i++)
    {
        ((uint32_t*)address)[i] = src[i];
        wait_for_flash_ready();
    }

    NRF_NVMC->CONFIG = NVMC_CONFIG_WEN_Ren;
    __ISB();
    __DSB();
}

RE: nRF52832 FLASH write issue

Henry_Chou — Thu, 31 Dec 2020 08:59:57 GMT

Okay,...So the write words in next address should be empty. It's right. But I suggest that the wait ready function not to apply delay. You may refer the example code \nRF5_SDK_17.0.2_d674dde\examples\peripheral\flash_fstorage

wait_for_flash_ready();

It's the function check for NV timing.

RE: nRF52832 FLASH write issue

zzzZ — Thu, 31 Dec 2020 08:49:33 GMT

#define START_ERASE_PAGE 86

#define OTA_DATA_START_ADDRESS 0x56000

uint8_t *tag_ota_write_addr = (uint8_t *)(OTA_DATA_START_ADDRESS);

void tag_ota_erase(uint8 page)
{
    NRF_LOG_INFO("tag_ota_erase \n");

    for(int i = 0; i < page; i++)
    {
        sd_flash_page_erase(START_ERASE_PAGE + i);
        NRF_LOG_INFO("tag_ota_erase page : %d\n",START_ERASE_PAGE+i);
        nrf_delay_ms(100);
    }
}

At the time of initialization, 10 pages have been erased.

using

tag_ota_erase(10);

RE: nRF52832 FLASH write issue

Henry_Chou — Thu, 31 Dec 2020 08:42:26 GMT

So it's the next 112 words write-cycling. But how about the page erase when you write cross over a page?

RE: nRF52832 FLASH write issue

zzzZ — Thu, 31 Dec 2020 08:38:35 GMT

My code is as below:

#define TEST_LEN    112
#define WRITE_TIME   10
void write_test(void)
{
    uint8 ota_data[TEST_LEN] = {0};


    for(int i = 0; i < TEST_LEN; i++)
    {
        ota_data[i] = i;
    }

    for(int i = 0; i < WRITE_TIME; i ++)
    {
        sd_flash_write((uint32_t *)tag_ota_write_addr, (uint32_t *)ota_data, TEST_LEN);

        NRF_LOG_INFO("addr = 0x%x", tag_ota_write_addr);

        tag_ota_write_addr += TEST_LEN;

        nrf_delay_ms(200);
    }
}

RE: nRF52832 FLASH write issue

Henry_Chou — Thu, 31 Dec 2020 08:36:44 GMT

May your show your processing code? I can't understand your meaning in your statement.

It's re-write 112 words (uint32_t)in original address , or write next 112 words in next 112 offset address.