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nRF51 -- max. I/O pad diode current to avoid latchup?

We have identified a possible transient fault condition in which a voltage in excess of VDD can be applied to an I/O of the nRF51. VDD is 3 V and the excess voltage would be nominally 5 V. We will include a series resistor to limit current, but we're limited in how large this can be. Some ICs provide a spec for the max. current which can flow through the pad diode from I/O line to VDD before latchup could occur, but I don't see such a spec published for the nRF51. Is this value known?

Thanks, Scott

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