Nrf52 flash programming : 'writes in a block between erase'

[Mahendra Tailor]

In the nrf52 OPS datasheet, for NVM and flash programming electrical specification (page 41) it has "Amount of writes in a block between erase" and Minimum for that is 181.

What does that actually mean?

For example, I know and understand "Write/erase cycles", but this is a new one on me.

A sector in nrf52 has 4K which means 1024 dwords. Which means I could end up having 1024 write operations before it is full. So the 181 specified can't be referring to how many times I could write.

To make matters worse, there are 32 bits in a write operation, so there are 32768 bits. So I could theretically have 32 seperate write operations at each of the 1024 locations, giving me a total of 32768 write operation before I would have to erase the block.

I am confused !!

Hope someone can clarify.

[pytepaul]

Hi RK,

Do you mean 181 writes at any address of the page or of the block ? Spec says "Amount of writes allowed in a block between erase", but I am confused about nordic's use of page and block. Usually in NAND datasheet a block is made of page, this is reversed in NRF52 chip. But on the block protection module a block is defined as a 4KB unit, which is the size of the page on the memory layout, while the block is 512B.

I have some understanding doubts about this 181 write spec as a block is said as 512B while writing 181 times one word is 724B. So limitation appply for bit to bit writing only...

So is it 181 write in the same block or in the whole page?

Thanks,