nRF54L15: BLE Mesh protocol with thousands nodes, flash memory wearing in a few years of operation

We are building a line of product to be used in big size building light management and control.

We believe that both the IV values and a huge quantity of SEQ separate counters (one for each assigned unicast address), are being stored and continuously updated using nvm subsystem.

Since nvm is usually implemented by means of a set of internal flash pages, even in presence of a wear leveling algorithm, within a few year of operation the device flash will reach the maximum number of erase cycles.

We need more than 15 years of guaranteed flash life: our networks can have 1000 nodes with 8k total elements/addresses and they will exchange an enormous number of messages.

Do you believe it will be required to implement NVM using an external device, may be using a different technology such F-Ram or other?

Many thanks in advance

Davide De Nardis

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