I have a small question regarding flash write/erase cycles and I was unable to find a clear answer.
I can see in NRF52 specs:
I would like to know if 10000 is related to write + erase or only erase.
I means, if I have below scenario:
How many flash cycle I will consume ? 1 or 3 ?
Without looking at the spec, my quick reply is that in general, you need to consider the erase limit. So in your case, it is 1. Note that, you might still get correct result (a read from an address returns the most recent write on that address) even after exhausting the erase limit, however the flash vendors do not guarantee that. Also, I don't think the limit would be 10000, that's quite low endurance, it should be around 100000 or more.
Okay, i checked the nrf52 product spec, and as you mentioned, it is indeed 10,000. I thought, the main flash ROM would have similar endurance, as some of the external serial flash memory.
Thank you for your quick reply.
Someone else can confirm: write action will not impact the flash cycle (Only erase will do that) ?
I need to be very careful regarding this information, my product will fully dependends to it. I need to write during 3 years on this flash and the frequency of it will be directly determined by this information.
@Thierry: Our confirmation is that one cycle includes one erase and one write. So 10000 erase/write cycle mean you can do 10000 erase and 10000 write.
Got it, thank you for your reply.
So regarding my scenario, I will consume 2 cycles in worst case (1/10000 for erase and 2/10000 for write).