How to modify the esb power level?

[Lurn_Z]

Hi all,

I use the SDK 17.1.0 and nrf52832 to develop, now I want to increase RF power.

In the "nrf52_bitfields.h" file I found the MAX level is 8dBm but undefined, and I found the file can not be modified.

How to modify this file? Or can I define it in another header file? Will it work?

Best regards,

Lurn

[RQiao]

此函数在播发初始化时调用

[Lurn_Z]

I am not using ble but esb, and I know the please to modify power level, but the max value I can change is 4dBm.

"* @note Supported tx_power values: -40dBm, -20dBm, -16dBm, -12dBm, -8dBm, -4dBm, 0dBm, +3dBm and +4dBm.
* In addition, on some chips the following values ​​are supported: +2dBm, +5dBm, +6dBm, +7dBm and +8dBm."

I want to change the level to 8 dBm, does my chip support those values?

If my chip not support those values. What happens when I edit it to 8dBm?